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Si
Photodiode
光电二极管它能够吸收光能并把光变为电流。
用于精密测量的从紫外到红外的宽响应PD,紫外到可见光的PD,以及用于一般测量的可见至红外的PD,以及普通型的陶瓷/塑胶PD。精密测量PD的特点是高灵敏度,高并列电阻和低电极间电容,以降低和外接放大器之间的噪音。
Photodiodes are semiconductors that
generate a current or voltage when illuminated by light. They have no
internal gain, but can operate at much higher light levels than other
detectors. Hamamatsu Si photodiodes have low capacitance and dark current,
which reduces noise and increases speed. The UV photodiodes resist degradation
in performance that results from continuous exposure to ultraviolet
light. Si photodiodes are suitable for precision photometry, making
them useful in medical instrumentation, analytical instruments, semiconductor
tools and industrial measurement systems. |
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PIN光电二极管(Si PIN Photodiode)
特点是响应快、暗电流小、频带宽、应用广,是目前用得最多的光电探测器件。PIN光电二极管不具备内部增益,只有探测作用,没有放大作用。
Si PIN photodiodes feature low capacitance,
which enables them to deliver a wide bandwidth with only a low bias
voltage, making them ideal for high-speed photometry as well as optical
communications. When connected to a high-speed preamplifier, their low
terminal capacitance ensures a wide response speed and lower noise.
Various types of PIN diodes are available, including those with a mini
lens. which increases fiber coupling efficiency and enhanced violet
sensitivity for violet laser detection. |
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APD雪崩光电二极管(Avalanche Photodiode)
APD雪崩光电二极管(Avalanche
Photodiode)简称APD,是一种具有内部增益,能将探测到的光电流进行放大的有源器件,这种放大作用可以增加接收机的灵敏度。
The silicon avalanche photodiode (Si APD) has an internal
gain mechanism, fast time response, low dark current and high sensitivity
in the UV to near infrared region. Hamamatsu offers SI APDs with active
areas ranging from 0.2mm to 5.0mm in diameter. Our range of APDs are
hermetically sealed in metal packages. Applications for APDs include
optical fiber communication, spatial light transmission, low-light-level
detection, high speed bar code reader, laser radar and biomedical devices.
APD modules that incorporate an APD, power supply and amplifiers are
available, as are APD arrays.
雪崩光电二极管 (APD) 暗电流小 频谱响应范围在 440nm 至 1,100nm 之间
在半导体光电探测器中,入射光子激发出的光生载流子在外加偏压下进入外电路后,形成可测量的光电流。PIN光电二极管即使在最大的响应度下,一个光子最多也只能产生一对电子-空穴对,是一种无内部增益的器件。为了获得更大的响应度,可以采用雪崩光电二极管(APD)。APD对光电流的放大作用基于电离碰撞效应,在一定的条件下,被加速的电子和空穴获得足够的能量,能够与晶格碰撞产生一对新的电子-空穴对,这种过程是一种连锁反应,从而由光吸收产生的一对电子-空穴对可以产生大量的电子-空穴对而形成较大的二次光电流。如此下去,形成了所谓的“雪崩”倍增,使信号电流放大。因此APD具有较高的响应度和内部增益,这种内部增益提高了器件的信噪比。APD将主要应用于长距离或接收光功率受到其它限制而较小的光纤通信系统。
低噪声、快响应、高灵敏度、高带宽、低造价,主要用于 雪崩光电二极管单光子探测器, 激光探测、测距、 激光测距机、激光经纬仪 警戒雷达。 |
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